PSMN5R0-100ES_15 Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel 100 V 5 mΩ standard level MOSFET in I2PAK

NXP Semiconductors
PSMN5R0-100ES
N-channel 100 V 5 mΩ standard level MOSFET in I2PAK
Table 6. Characteristics …continued
Symbol
Parameter
Source-drain diode
V_SD
source-drain voltage
t_rr
reverse recovery time
Q_r
recovered charge
[1] Measured 3 mm from package.
Conditions
I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
I_S = 25 A; dI_S/dt = -100 A/µs;
V_GS = 0 V; V_DS = 50 V
Min Typ Max Unit
-
0.8 1.2 V
-
75
-
ns
-
235 -
nC
250
g_fs
(S)
200
003aaf723
100
I_D
(A)
80
003aaf724
150
60
100
40
50
0
0
30
60
90 _{ID (A)} 120
20
0
0
T_j = 175 °C
T_j = 25 °C
2
4 _VGS(V) 6
Fig 5. Forward transconductance as a function of
drain current; typical values
20
R_DSon
(mΩ)
15
003aaf725
10
5
0
0
5
10
15 _VGS(V) 20
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
240
I_D
(A)
200
160
120
80
10.0
20.0 8.0
6.0
5.5
003aaf726
V_GS(V) =5
40
4.5
0
0
0.5
1
1.5 _VDS(V) 2
Fig 7. Drain-source on-state resistance as a function Fig 8. Output characteristics: drain current as a
of gate-source voltage; typical values
function of drain-source voltage; typical values
PSMN5R0-100ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 September 2011
© NXP B.V. 2011. All rights reserved.
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