PSMN5R0-100ES_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel 100 V 5 mΩ standard level MOSFET in I2PAK

PSMN5R0-100ES
N-channel 100 V 5 mΩ standard level MOSFET in I2PAK
Rev. 3 — 26 September 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
 High efficiency due to low switching
and conduction losses
 Suitable for standard level gate drive
sources
1.3 Applications
 DC-to-DC converters
 Load switching
 Motor control
 Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
V_DS
I_D
Parameter
drain-source voltage
drain current
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
T_mb = 25 °C; V_GS = 10 V;
see Figure 1
Min Typ Max Unit
-
-
100 V
[1] _-
-
120 A
P_tot
total power dissipation
T_j
junction temperature
Static characteristics
R_DSon
drain-source on-state
resistance
Dynamic characteristics
T_mb = 25 °C; see Figure 2
-
-
-55 -
338 W
175 °C
V_GS = 10 V; I_D = 25 A;
-
T_j = 100 °C; see Figure 12;
see Figure 13
V_GS = 10 V; I_D = 25 A;
[2] _-
T_j = 25 °C; see Figure 13
7.7 9 mΩ
4.3 5 mΩ
Q_GD
Q_G(tot)
gate-drain charge
total gate charge
V_GS = 10 V; I_D = 75 A;
V_DS = 50 V; see Figure 14;
see Figure 15
-
49 -
nC
-
170 -
nC
Avalanche ruggedness
E_DS(AL)S
non-repetitive
drain-source avalanche
energy
V_GS = 10 V; T_j(init) = 25 °C;
I_D = 120 A; V_sup ≤ 100 V;
R_GS = 50 Ω; Unclamped
-
-
537 mJ