PSMN4R5-40BS_15 Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel 40 V 4.5 mΩ standard level MOSFET in D2PAK

NXP Semiconductors
PSMN4R5-40BS
N-channel 40 V 4.5 mΩ standard level MOSFET in D2PAK
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
03aa35
min typ max
2
4
6
V_GS (V)
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
003aad280
max
typ
min
60
120
180
T_j (°C)
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
2
a
03aa27
1.5
1
0.5
0
−60
0
60
120 _{Tj (°C)} 180
Fig 12. Gate-source threshold voltage as a function of
junction temperature
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 14. Gate charge waveform definitions
PSMN4R5-40BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 March 2012
© NXP B.V. 2012. All rights reserved.
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