PSMN4R5-40BS_15 Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel 40 V 4.5 mΩ standard level MOSFET in D2PAK

NXP Semiconductors
PSMN4R5-40BS
N-channel 40 V 4.5 mΩ standard level MOSFET in D2PAK
003aad027
100
g_fs
(S)
75
50
25
0
0
25
50
75 _{ID (A)} 100
25
R_DSon
(mΩ)
20
15
10
5
0
0
003aad028
5
10
15 _{VGS (V)} 20
Fig 7. Forward transconductance as a function of
drain current; typical values
300
I_D
(A)
20 ¹⁵
10
250
7.5
200
150
100
50
0
0
1
2
003aad020
V_GS (V) = 7
6.5
6
5.5
5
4.5
3
4
5
6
V_DS (V)
Fig 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values
100
003aad022
I_D
(A)
80
60
40
20
T_j = 175 °C
25 °C
0
0
2
4
6 _{VGS (V)} 8
Fig 9. Output characteristics: drain current as a
Fig 10. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
PSMN4R5-40BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 March 2012
© NXP B.V. 2012. All rights reserved.
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