PSMN4R5-40BS_15 Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel 40 V 4.5 mΩ standard level MOSFET in D2PAK

NXP Semiconductors
PSMN4R5-40BS
N-channel 40 V 4.5 mΩ standard level MOSFET in D2PAK
Table 7. Characteristics …continued
Tested to JEDEC standards where applicable.
Symbol
Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage
I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
t_rr
reverse recovery time
Q_r
recovered charge
I_S = 25 A; dI_S/dt = -100 A/µs;
V_GS = 0 V; V_DS = 20 V
I_S = 25 A; dI_S/dt = -100 A/µs;
V_GS = 0 V; V_DS = 20 V; T_j = 25 °C
Min Typ Max Unit
-
0.75 1.2 V
-
40
-
ns
-
33
-
nC
10
R_DSon
(mΩ)
8
003aad021
6
V_GS (V) = 6.5
7
7.5
6
10
4
15
20
2
0
50
100
150
200
250
I_D (A)
4000
C
C_iss
(pF)
3000
2000
C_rss
003aad026
1000
0
0
2
4
6
8
10
V_GS (V)
Fig 5. Drain-source on-state resistance as a function Fig 6. Input and reverse transfer capacitances as a
of drain current; typical values
function of gate-source voltage; typical values
PSMN4R5-40BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 March 2012
© NXP B.V. 2012. All rights reserved.
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