PSMN2R7-30BL Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel 30 V, 1.8 m logic level MOSFET in D2PAK

NXP Semiconductors
PSMN2R7-30BL
N-channel 30 V 3.0 mΩ logic level MOSFET in D2PAK
3
VGS (th)
(V)
2
1
max
typ
min
003a a c982
0
-6 0
0
60
120
180
Tj (°C)
10
R_DSon
(mΩ)
8
V_GS (V) = 2.8
003aad405
3
6
4
3.5
2
10
4.5
0
0
20
40
60
80
100
I_D (A)
Fig 11. Gate-source threshold voltage as a function of Fig 12. Drain-source on-state resistance as a function
junction temperature
of drain current; typical values
2
a
03aa27
1.5
1
0.5
0
−60
0
60
120 _{Tj (°C)} 180
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 14. Gate charge waveform definitions
PSMN2R7-30BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 March 2012
© NXP B.V. 2012. All rights reserved.
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