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PSMN2R7-30BL Datasheet, PDF (6/15 Pages) NXP Semiconductors – N-channel 30 V, 1.8 m logic level MOSFET in D2PAK
NXP Semiconductors
PSMN2R7-30BL
N-channel 30 V 3.0 mΩ logic level MOSFET in D2PAK
7. Characteristics
Table 7. Characteristics
Tested to JEDEC standards where applicable.
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source
breakdown voltage
gate-source threshold
voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10; see Figure 11
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 11
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 125 °C
VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
see Figure 12
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 13; see Figure 12
VGS = 10 V; ID = 25 A; Tj = 100 °C;
see Figure 13; see Figure 12
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 12
RG
gate resistance
Dynamic characteristics
f = 1 MHz
QG(tot)
total gate charge
ID = 25 A; VDS = 15 V; VGS = 10 V;
see Figure 14; see Figure 15
QGS
QGS(th)
gate-source charge
pre-threshold
gate-source charge
ID = 0 A; VDS = 0 V; VGS = 10 V
ID = 25 A; VDS = 15 V; VGS = 4.5 V;
see Figure 14; see Figure 15
QGS(th-pl)
post-threshold
gate-source charge
QGD
VGS(pl)
gate-drain charge
gate-source plateau
voltage
ID = 25 A; VDS = 15 V; VGS = 4.5 V
ID = 25 A; VDS = 15 V;
see Figure 14; see Figure 15
Ciss
Coss
Crss
td(on)
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
VDS = 15 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
VDS = 12 V; RL = 0.5 Ω; VGS = 4.5 V;
RG(ext) = 4.7 Ω
PSMN2R7-30BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 March 2012
Min Typ Max Unit
30 -
-
V
27 -
-
V
1.3 1.7 2.15 V
0.5 -
-
V
-
-
2.45 V
-
0.3 5
µA
-
-
100 µA
-
10 100 nA
-
10 100 nA
-
3.16 3.7 mΩ
-
4.88 5.7 mΩ
-
3.6 4.2 mΩ
-
2.57 3
mΩ
-
1
-
Ω
-
66 -
nC
-
60 -
nC
-
32 -
nC
-
12 -
nC
-
6.4 -
nC
-
5.6 -
nC
-
8
-
nC
-
2.6 -
V
-
3954 -
pF
-
822 -
pF
-
356 -
pF
-
46 -
ns
© NXP B.V. 2012. All rights reserved.
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