PSMN2R7-30BL Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel 30 V, 1.8 m logic level MOSFET in D2PAK

NXP Semiconductors
PSMN2R7-30BL
N-channel 30 V 3.0 mΩ logic level MOSFET in D2PAK
10
R_DSon
(mΩ)
8
6
4
2
0
0
003aad412
5
10
15 _{VGS (V)} 20
120
I_D
(A)
90
10 _4.5
3.5
60
30
0
0
1
003aad404
V_GS (V) = 3
2.8
2.6
2.4
2
3
V_DS (V)
Fig 7. Drain-source on-state resistance as a function Fig 8. Output characteristics: drain current as a
of gate-source voltage; typical values
function of drain-source voltage; typical values
100
003aad406
10^-1
I_D
I_D
(A)
(A)
80
10^-2
003aab271
min
typ
max
60
10^-3
40
20
0
0
T_j = 175 °C
T_j = 25 °C
1
2
3
4
V_GS (V)
10^-4
10^-5
10^-6
0
1
2 V_GS (V) 3
Fig 9. Transfer characteristics: drain current as a
Fig 10. Sub-threshold drain current as a function of
function of gate-source voltage; typical values
gate-source voltage
PSMN2R7-30BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 March 2012
© NXP B.V. 2012. All rights reserved.
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