PSMN1R5-30YLC_15 Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
PSMN1R5-30YLC
N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower
8
RDS on
(mΩ)
6
003aaf 649
2.6
VGS (V) = 2.8
4
3.0
3.5
2
4.5 10
0
0
25
50
75 _{ID (A)} 100
003aaf 650
2
a
10V
1.5
VGS=4 .5 V
1
0.5
0
-6 0
0
60
120
180
Tj (°C)
Fig 12. Drain-source on-state resistance as a function Fig 13. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
10
VGS
(V)
8
6
4
2
0
0
003aaf 656
24V
15V
VDS = 6V
20
40
60 _{QG (nC)} 80
Fig 14. Gate charge waveform definitions
Fig 15. Gate-source voltage as a function of gate
charge; typical values
PSMN1R5-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 17 May 2011
© NXP B.V. 2011. All rights reserved.
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