PSMN1R5-30YLC_15 Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
PSMN1R5-30YLC
N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower
240
gfs
(S )
180
003aaf 653
120
60
0
0
25
50
75
100
ID (A)
100
ID
(A)
80
60
40
20
0
0
003aaf 655
Tj = 150°C
Tj = 25 °C
1
2
3
4
VGS (V)
Fig 8. Forward transconductance as a function of
drain current; typical values
10^-1
ID
(A)
10^-2
10^-3
10^-4
10^-5
10^-6
0
003aaf 652
Min Typ Max
1
2
3
VGS (V)
Fig 9. Transfer characteristics; drain-source current
as a function of gate-source voltage; typical
values
3
VGS (th)
(V) _{Max (1mA)}
2
003aaf 651
ID = 5mA
1mA
1 Min (5mA)
0
-6 0
0
60
120
180
Tj (°C)
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
Fig 11. Gate-source threshold voltage as a function of
junction temperature
PSMN1R5-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 17 May 2011
© NXP B.V. 2011. All rights reserved.
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