PSMN1R5-30YLC_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower technology

PSMN1R5-30YLC
N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using
NextPower technology
Rev. 2 — 17 May 2011
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ High reliability Power SO8 package,
qualified to 175°C
„ Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
„ Ultra low QG, QGD, and QOSS for
high system efficiencies at low and
high loads
„ Ultra low Rdson and low parasitic
inductance
1.3 Applications
„ DC-to-DC converters
„ Lithium-ion battery protection
„ Load switching
„ Power OR-ing
„ Server power supplies
„ Sync rectifier
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source
voltage
25 °C ≤ T_j ≤ 175 °C
-
-
30 V
I_D
drain current
T_mb = 25 °C; V_GS = 10 V;
see Figure 1
[1] _-
-
100 A
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
-
-
179 W
T_j
junction
temperature
-55 -
175 °C
Static characteristics
R_DSon
drain-source
V_GS = 4.5 V; I_D = 25 A; T_j = 25 °C;
-
1.65 2.05 mΩ
on-state resistance see Figure 12
V_GS = 10 V; I_D = 25 A; T_j = 25 °C;
see Figure 12
-
1.3 1.55 mΩ