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| PSMN011-30YLC Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel 30 V 11.6 mΩ logic level MOSFET in LFPAK using NextPower technology | |||
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NXP Semiconductors
PSMN011-30YLC
N-channel 30 V 11.6 m⦠logic level MOSFET in LFPAK using NextPower technology
50
RDSon VGS(V) = 2.8
3.0
(mΩ)
40
003aag225
30
20
3.5
4.5
10
10
0
0
10
20
30
40 ID(A) 50
2
a
1.5
1
003aag226
4.5V
VGS=10V
0.5
0
-60
0
60
120
180
Tj (°C)
Fig 12. Drain-source on-state resistance as a function Fig 13. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
10
VGS
(V)
8
6
4
2
0
0
24V
003aag227
6V
VDS= 15V
4
8
12
QG (nC)
Fig 14. Gate charge waveform definitions
Fig 15. Gate-source voltage as a function of gate
charge; typical values
PSMN011-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 â 24 October 2011
© NXP B.V. 2011. All rights reserved.
9 of 15
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