PSMN011-30YLC Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel 30 V 11.6 mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
PSMN011-30YLC
N-channel 30 V 11.6 mΩ logic level MOSFET in LFPAK using NextPower technology
50
g_fs
(S)
40
30
20
10
0
0
003aag221
10
20
30 _{ID (A)} 40
50
I_D
(A)
40
30
20
10
0
0
003aag222
T_j = 150 °C
T_j = 25 °C
1
2
3 _VGS(V) 4
Fig 8. Forward transconductance as a function of
drain current; typical values
10^-1
I_D
(A)
10^-2
003aag223
10^-3
Min Typ Max
10^-4
10^-5
10^-6
0
1
2
3
V_GS (V)
Fig 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
3
V_GS(th)
(V)
Max (1mA)
2
003aag224
I_D =5mA
1mA
1 _{Min (5mA)}
0
-60
0
60
120
180
T_j (°C)
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
Fig 11. Gate-source threshold voltage as a function of
junction temperature
PSMN011-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 24 October 2011
© NXP B.V. 2011. All rights reserved.
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