PSMN011-30YLC Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel 30 V 11.6 mΩ logic level MOSFET in LFPAK using NextPower technology

PSMN011-30YLC
N-channel 30 V 11.6 mΩ logic level MOSFET in LFPAK using
NextPower technology
Rev. 3 — 24 October 2011
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
 High reliability Power SO8 package,
qualified to 175°C
 Low parasitic inductance and
resistance
 Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
 Ultra low QG, QGD, & QOSS for high
system efficiencies at low and high
loads
1.3 Applications
 DC-to-DC converters
 Load switching
 Synchronous buck regulator
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
V_DS
drain-source voltage
I_D
drain current
P_tot
total power dissipation
T_j
junction temperature
Static characteristics
Conditions
25 °C ≤ T_j ≤ 175 °C
T_mb = 25 °C; V_GS = 10 V; see Figure 1
T_mb = 25 °C; see Figure 2
R_DSon
drain-source on-state resistance V_GS = 4.5 V; I_D = 10 A; T_j = 25 °C;
see Figure 12
V_GS = 10 V; I_D = 10 A; T_j = 25 °C;
see Figure 12
Dynamic characteristics
Q_GD
gate-drain charge
V_GS = 4.5 V; I_D = 10 A; V_DS = 15 V; see
Figure 14; see Figure 15
Q_G(tot)
total gate charge
V_GS = 4.5 V; I_D = 10 A; V_DS = 15 V; see
Figure 14; see Figure 15
Min Typ Max Unit
-
-
30 V
-
-
37 A
-
-
29 W
-55 -
175 °C
-
12.3 14.5 mΩ
-
9.9 11.6 mΩ
-
1.4 -
nC
-
4.9 -
nC