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| PMEG3050EP_15 Datasheet, PDF (9/13 Pages) NXP Semiconductors – 5 A low VF MEGA Schottky barrier rectifier | |||
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NXP Semiconductors
8. Test information
PMEG3050EP
5 A low VF MEGA Schottky barrier rectifier
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig 13. Duty cycle definition
The current ratings for the typical waveforms as shown in Figure 9, 10, 11 and 12 are
calculated according to the equations: IF(AV) = IM à δ with IM defined as peak current,
IRMS = IF(AV) at DC, and IRMS = IM à δ with IRMS defined as RMS current.
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
2.7
2.3
1
1.1
0.9
0.6
0.3
5.0 4.0
4.4 3.6
Dimensions in mm
Fig 14. Package outline SOD128
2
1.9
1.6
0.22
0.10
07-09-12
PMEG3050EP_1
Product data sheet
Rev. 01 â 10 December 2009
© NXP B.V. 2009. All rights reserved.
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