PMEG3050EP_15 Datasheet, PDF (5/13 Pages) NXP Semiconductors – 5 A low VF MEGA Schottky barrier rectifier

NXP Semiconductors
PMEG3050EP
5 A low V_F MEGA Schottky barrier rectifier
10²
Z_th(j-a)
(K/W)
10
duty cycle =
1 _0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02 _0.01
1
0
006aab754
10^−1
10^−3
10^−2
10^−1
1
10
10²
10³
t_p (s)
Ceramic PCB, Al₂O₃, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
V_F
forward voltage
I_F = 1 A
I_F = 3 A
I_F = 5 A
I_R
reverse current
V_R = 5 V
V_R = 30 V
C_d
diode capacitance f = 1 MHz
V_R = 1 V
V_R = 10 V
Min Typ Max Unit
-
240 275 mV
-
285 340 mV
-
315 360 mV
-
330 -
μA
-
2.6 8
mA
-
800 -
pF
-
260 -
pF
PMEG3050EP_1
Product data sheet
Rev. 01 — 10 December 2009
© NXP B.V. 2009. All rights reserved.
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