BUK7E2R6-60E_15 Datasheet, PDF (9/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7E2R6-60E
N-channel TrenchMOS standard level FET
250
I_S
(A)
200
003aaf502
150
100
50
T_j = 175 °C
T_j = 25 °C
0
0
0.3
0.6
0.9
1.2
V_SD (V)
V_GS = 0 V
Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
BUK7E2R6-60E
Product data sheet
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11 September 2012
© NXP B.V. 2012. All rights reserved
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