BUK7E2R6-60E_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7E2R6-60E
N-channel TrenchMOS standard level FET
2.4
a
1.8
003aag814
1.2
0.6
0
-60
0
60
120
180
T_j (°C)
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig. 13. Gate charge waveform definitions
10
V_GS
(V)
8
6
4
14 V
003aaf501
V_DS = 48 V
2
0
0
50
100
150
200
Q_G (nC)
T_j = 25 °C; I_D = 25 A
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
10⁵
C
(pF)
10⁴
10³
10²
003aaf497
C_iss
C_oss
C_rss
10
10^-1
1
10
10²
V_DS (V)
V_GS = 0 V; f = 1 MHz
Fig. 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK7E2R6-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 September 2012
© NXP B.V. 2012. All rights reserved
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