BUK7C08-55AITE_15 Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET

NXP Semiconductors
BUK7C08-55AITE
N-channel TrenchPLUS standard level FET
5
V_GS(th)
(V)
4
3
2
1
max
typ
min
03aa32
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
03aa35
min typ max
0
−60
0
60
120
180
T_j (°C)
10^−6
0
2
4
6
V_GS (V)
Fig 9. Gate-source threshold voltage as a function of
junction temperature
T_j = 25 C; V_DS = V_G
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
80
03no00
8000
03ni69
C
gfs
(pF)
(S)
60
6000
Ciss
40
4000
Crss
Coss
20
2000
0
0
25
50
75 _{ID (A)} 100
0
10-2
10-1
1
10 _{VDS (V)} 102
Fig 11. Forward transconductance as a function of
drain current; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK7C08-55AITE_2
Product data sheet
Rev. 02 — 17 February 2009
© NXP B.V. 2009. All rights reserved.
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