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| BUK7C08-55AITE_15 Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET | |||
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NXP Semiconductors
BUK7C08-55AITE
N-channel TrenchPLUS standard level FET
Table 6. Characteristics â¦continued
Symbol
Parameter
Conditions
Ciss
input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; see Figure 12
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
LS
internal source
inductance
Source-drain diode
VDS = 30 V; RL = 1.2 â¦; VGS = 10 V;
RG(ext) = 10 â¦; Tj = 25 °C
measured from upper edge of drain
mounting base to centre of die; Tj = 25 °C
measured from source lead to source
bond pad; Tj = 25 °C; lead length 6 mm
VSD
source-drain voltage IS = 40 A; VGS = 0 V; Tj = 25 °C;
see Figure 19
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V;
Qr
recovered charge
VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
-
4200 -
pF
-
920 -
pF
-
500 -
pF
-
35
-
ns
-
115 -
ns
-
155 -
ns
-
110 -
ns
-
2.5 -
nH
-
7.5 -
nH
-
0.85 1.2 V
-
80
-
ns
-
200 -
nC
BUK7C08-55AITE_2
Product data sheet
Rev. 02 â 17 February 2009
© NXP B.V. 2009. All rights reserved.
7 of 15
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