BUK7C08-55AITE_15 Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET

NXP Semiconductors
BUK7C08-55AITE
N-channel TrenchPLUS standard level FET
400
ID
(A)
300 20
10
98
200
100
0
0
2
4
03nn97
Label is VGS (V)
7.5
7
6.5
6
5.5
5
4.5
4
6
8
10
VDS (V)
14
RDSon
(mΩ)
12
10
8
6
4
4
03nn99
8
12
16 _{VGS (V)} 20
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
20
03nn98
2
R_DSon
(mΩ)
16
5.5
6.5
6
Label is VGS (V)
7
7.5 8
a
1.5
03ne89
12
1
10
8
20
0.5
4
0
100
200
300 _{ID (A)} 400
0
-60
0
60
120
180
Tj (°C)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK7C08-55AITE_2
Product data sheet
Rev. 02 — 17 February 2009
© NXP B.V. 2009. All rights reserved.
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