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| BUK768R1-100E_15 Datasheet, PDF (9/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
BUK768R1-100E
N-channel TrenchMOS standard level FET
400
IS
(A)
320
003aah749
240
160
Tj = 175°C
80
Tj = 25 °C
0
0
0.4
0.8
1.2 VSD(V) 1.6
Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
BUK768R1-100E
Product data sheet
All information provided in this document is subject to legal disclaimers.
5 October 2012
© NXP B.V. 2012. All rights reserved
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