BUK768R1-100E_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK768R1-100E
N-channel TrenchMOS standard level FET
Symbol
Parameter
Source-drain diode
I_S
source current
I_SM
peak source current
Avalanche ruggedness
E_DS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Min Max Unit
T_mb = 25 °C
pulsed; t_p ≤ 10 µs; T_mb = 25 °C
[1]
-
-
100 A
439 A
I_D = 100 A; V_sup ≤ 100 V; R_GS = 50 Ω; [2][3] -
V_GS = 10 V; T_j(init) = 25 °C; unclamped;
Fig. 3
219 mJ
[1] Continuous current is limited by package.
[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[3] Refer to application note AN10273 for further information.
120
I_D
(A)
(1)
80
003aah735
120
P_der
(%)
80
03aa16
40
40
0
0
50
100
150 _{Tmb(°C)200}
(1) Capped at 120A due to package
Fig. 1. Continuous drain current as a function of
mounting base temperature
0
0
50
100
150
200
T_mb (°C)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
BUK768R1-100E
Product data sheet
All information provided in this document is subject to legal disclaimers.
5 October 2012
© NXP B.V. 2012. All rights reserved
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