BUK768R1-100E_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK768R1-100E
N-channel TrenchMOS standard level FET
250
I_D
(A)
200
003aah742
5
V_GS(th)
(V)
4
003aah027
max
150
3
typ
100
T_j = 175 °C
50
T_j = 25 °C
2
min
1
0
0
2
4
6
8
10
V_GS (V)
Fig. 8. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
0
-60
0
60
120
180
T_j (°C)
Fig. 9. Gate-source threshold voltage as a function of
junction temperature
10^-1
I_D
(A)
10^-2
10^-3
10^-4
10^-5
003aah028
min
typ max
25
R_DSon
(mΩ)
4.5
20
15
10
5
003aah745
5
5.5
6
V_GS(V) = 10
10^-6
0
2
4
6
V_GS(V)
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
0
0
80
160
I_D (A) ²⁴⁰
T_j = 25 °C; t_p = 300 μs
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
BUK768R1-100E
Product data sheet
All information provided in this document is subject to legal disclaimers.
5 October 2012
© NXP B.V. 2012. All rights reserved
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