BUK7520-55A_15 Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET1

NXP Semiconductors
2.4
a
1.8
03aa28
1.2
0.6
0
−60
0
60
120
180
T_j (°C)
BUK7520-55A
N-channel TrenchMOS standard level FET
C_iss, ²⁵⁰⁰
C_oss,
C_rss
C_iss
(pF) ₂₀₀₀
C_oss
1500
C_rss
1000
500
0
10^−2
10^−1
1
03nc65
10
10²
V_DS (V)
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
120
I_S
(A)
100
03nc58
80
T_j = 175 °C
60
T_j = 25 °C
40
20
0
0.0
0.5
1.0 _{VSD (V)} 1.5
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
BUK7520-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 15 June 2010
© NXP B.V. 2010. All rights reserved.
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