BUK7520-55A_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET1

BUK7520-55A
N-channel TrenchMOS standard level FET
Rev. 02 — 15 June 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
„ Suitable for standard level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V and 24 V loads
„ Automotive and general purpose
power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DS
drain-source
T_j ≥ 25 °C; T_j ≤ 175 °C
voltage
I_D
drain current
V_GS = 10 V; T_mb = 25 °C;
see Figure 1; see Figure 3
P_tot
total power
T_mb = 25 °C; see Figure 2
dissipation
Static characteristics
R_DSon
drain-source
on-state
resistance
V_GS = 10 V; I_D = 25 A; T_j = 175 °C;
see Figure 12; see Figure 13
V_GS = 10 V; I_D = 25 A; T_j = 25 °C;
see Figure 12; see Figure 13
Avalanche ruggedness
E_DS(AL)S
non-repetitive
I_D = 48 A; V_sup ≤ 55 V; R_GS = 50 Ω;
drain-source
V_GS = 10 V; T_j(init) = 25 °C;
avalanche energy unclamped
Min Typ Max Unit
-
-
55 V
-
-
54 A
-
-
118 W
-
-
40 mΩ
-
17 20 mΩ
-
-
115 mJ