BUK7520-55A_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET1

NXP Semiconductors
BUK7520-55A
N-channel TrenchMOS standard level FET
120
I_D
(A)
100
03nc61
80
T_j = 25 °C
60
T_j = 175 °C
40
20
0
0
2
4
6
8
10
V_GS (V)
10
V_GS
(V)
8
6
V_DD = 14 V
03nc59
V_DD = 44 V
4
2
0
0
10
20
30
40
Q_G (nC)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source voltage as a function of turn-on
function of gate-source voltage; typical values
gate charge; typical values
5
V_GS(th)
(V)
4
3
2
1
max
typ
min
03aa32
45
R_DSon
(mΩ)
40
35
30
25
20
5.5 6 6.5 7
03nc64
8 V_GS (V) = 10
0
−60
0
60
120
180
T_j (°C)
15
0
50
100
150
I_D (A)
Fig 11. Gate-source threshold voltage as a function of Fig 12. Drain-source on-state resistance as a function
junction temperature
of drain current; typical values
BUK7520-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 15 June 2010
© NXP B.V. 2010. All rights reserved.
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