BUK7107-40ATC Datasheet, PDF (9/16 Pages) NXP Semiconductors – TrenchPLUS standard level FET

Philips Semiconductors
BUK71/7907-40ATC
TrenchPLUS standard level FET
120
ID
(A)
100
80
60
40
20
0
0
03ni70
175 °C
Tj = 25 °C
2
4 _{VGS (V)} 6
10
VGS
(V)
8
6
4
2
0
0
03ni71
14 V
VDS = 32 V
40
80 _{QG (nC)} 120
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
52
VDSR(CL)
(V)
51
50
175 °C
Tj = 25 °C
- 55 °C
03ni61
56
VDSR(CL)
(V)
52
175 °C
Tj = 25 °C
03ni62
- 55 °C
48
44
49
0
2
4
6
8 _{ID (A)} 10
40
0
1
2 _{-IGS(CL) (mA)} 3
I_GS(CL) = −2 mA
Fig 15. Drain-source clamping voltage as a function of
drain current; typical values.
I_D = 10 A
Fig 16. Drain-source clamping voltage as a function of
gate-source current; typical values.
9397 750 09874
Product data
Rev. 01 — 9 August 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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