BUK7107-40ATC Datasheet, PDF (7/16 Pages) NXP Semiconductors – TrenchPLUS standard level FET

Philips Semiconductors
BUK71/7907-40ATC
TrenchPLUS standard level FET
400
ID ¹²
(A)
20
300
10
8.5
200
100
0
0
2
4
03ni65
8
VGS (V) = 7.5
7
6.5
6
5.5
4
4.5
6
8
10
VDS (V)
8
RDSon
(mΩ)
7
6
5
4
5
03ni66
10
15
20
VGS (V)
T_j = 25 °C; t_p = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 50 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
03ni67
12
RDSon
2
(mΩ)
10
VGS (V) = 5.5
a
6
6.5
1.5
8
7
8
6
10
1
4
0.5
2
03ne89
0
0
20
40
60
80 100 120
ID (A)
T_j = 25 °C; t_p = 300 µs
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
Tj (°C)
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 09874
Product data
Rev. 01 — 9 August 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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