BUK654R6-55C Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK654R6-55C
N-channel TrenchMOS intermediate level FET
10
V_GS
(V)
8
6
4
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V_DS = 14 V
V_DS = 44 V
2
0
0
50
100
150
Q_G (nC)
T_j = 25°C; I_D = 25 A
Fig 13. Gate-source voltage as a function of gate
charge; typical values
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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Fig 14. Gate charge waveform definitions
10⁵
C
(pF)
10⁴
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C_iss
160
I_S
(A)
120
80
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10³
C_oss
T_j = 175 °C
T_j = 25 °C
40
C_rss
10²
10^−2
10^−1
1
10
10²
V_DS (V)
V_GS = 0 V; f = 1 MHz
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
0
0
0.4
0.8 _{VSD (V)} 1.2
V_GS = 0 V
Fig 16. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
BUK654R6-55C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 14 October 2010
© NXP B.V. 2010. All rights reserved.
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