BUK654R6-55C Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK654R6-55C
N-channel TrenchMOS intermediate level FET
Table 6. Characteristics …continued
Symbol
Parameter
Source-drain diode
V_SD
source-drain voltage
t_rr
reverse recovery time
Q_r
recovered charge
Conditions
I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 16
I_S = 20 A; dI_S/dt = -100 A/µs;
V_GS = 0 V; V_DS = 25 V
Min Typ Max Unit
-
0.83 1.2 V
-
55
-
ns
-
112 -
nC
160
g_fs
(S)
120
003aae708
80
40
0
0
20
40
60
80
I_D (A)
Fig 5.
T_j = 25°C; V_DS = 25 V
Forward transconductance as a function of
drain current; typical values
200
I_D
(A)
160
V_GS (V) = 10 6 5
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4.5
120
4
80
3.8
3.6
40
3.4
0
0
0.5
1
1.5
2
V_DS (V)
Fig 6.
T_j = 25°C; t_p = 300 μs
Output characteristics: drain current as a
function of drain-source voltage; typical values
160
I_D
(A)
120
80
40
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T_j = 175 °C
T_j = 25 °C
20
R_DSon
(mΩ)
16
12
8
4
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0
0
1
2
3
4
5
V_GS (V)
V_DS = 25 V
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
0
2
4
6
8
10
V_GS (V)
T_j = 25°C; I_D 25 A
Fig 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values
BUK654R6-55C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 14 October 2010
© NXP B.V. 2010. All rights reserved.
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