BUK654R6-55C Datasheet, PDF (2/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK654R6-55C
N-channel TrenchMOS intermediate level FET
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Avalanche ruggedness
E_DS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
I_D = 100 A; V_sup ≤ 55 V;
R_GS = 50 Ω; V_GS = 10 V;
T_j(init) = 25 °C
Q_GD
gate-drain charge I_D = 25 A; V_DS = 44 V;
V_GS = 10 V; see Figure 13;
see Figure 14
[1] Continuous current is limited by package.
2. Pinning information
Min Typ Max Unit
-
-
263 mJ
-
31.5 -
nC
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
gate
D
drain
S
source
D
mounting base; connected to
drain
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78A (TO-220AB)
Table 3. Ordering information
Type number
Package
Name
BUK654R6-55C
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78A
BUK654R6-55C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 14 October 2010
© NXP B.V. 2010. All rights reserved.
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