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| BUK6209-30C_15 Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET | |||
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NXP Semiconductors
BUK6209-30C
N-channel TrenchMOS intermediate level FET
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
10
VGS
(V)
8
003aae792
6
VDS= 14V
24V
4
2
0
0
10
20
30 QG (nC) 40
Fig 13. Gate charge waveform definitions
104
C
(pF)
103
102
003aae793
Ciss
Coss
Crss
10
10-2
10-1
1
10 VDS(V) 102
Fig 14. Gate-source voltage as a function of gate
charge; typical values
003aae791
100
IS
(A)
80
60
40
Tj = 175 °C
Tj = 25 °C
20
0
0
0.5
1
1.5 VSD(V) 2
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 16. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
BUK6209-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 â 1 October 2010
© NXP B.V. 2010. All rights reserved.
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