BUK6209-30C_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK6209-30C
N-channel TrenchMOS intermediate level FET
4
V_GS(th)
(V)
3
2
1
max
typ
min
003aad805
0
-60
0
60
120
180
T_j (°C)
10^-1
I_D
(A)
10^-2
10^-3
10^-4
10^-5
10^-6
0
003aad806
min typ max
1
2
3
4
V_GS (V)
Fig 9. Gate-source threshold voltage as a function of Fig 10. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
50
003aae790
2
R_DSon
(mΩ)
a
V_GS(V) = 3.6 3.8 4.0
40
1.5
03aa27
30
1
20
4.5
5.0
10
6.0
0.5
10.0
0
0
20
40
60
I_D (A)
0
−60
0
60
120 _{Tj (°C)} 180
Fig 11. Drain-source on-state resistance as a function Fig 12. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
BUK6209-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 October 2010
© NXP B.V. 2010. All rights reserved.
8 of 14