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| BUK6209-30C_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET | |||
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NXP Semiconductors
BUK6209-30C
N-channel TrenchMOS intermediate level FET
80
ID
(A)
60
(1)
40
20
003aae794
120
Pder
(%)
80
40
03na19
0
0
50
100
150
200
Tmb (°C)
(1) Capped at 50 A due to package
Fig 1. Continuous drain current as a function of
mounting base temperature
104
ID
(A)
103
102
Limit RDSon= VDS/ ID
10
1
10-1
10-1
1
0
0
50
100
150
200
Tmb (°C)
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aae788
DC
10
tp = 10 μ s
100 μs
1 ms
10 ms
100 ms
102
V DS(V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK6209-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 â 1 October 2010
© NXP B.V. 2010. All rights reserved.
4 of 14
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