BFU540 Datasheet, PDF (9/16 Pages) NXP Semiconductors – NPN SiGe wideband transistor

Philips Semiconductors
NPN SiGe wideband transistor
Product specification
BFU540
handbook, h⁴alfpage
NFmin
(dB)
3
2
1
MLE163
f = 5 GHz
f = 2 GHz
3
handbook, halfpage
NFmin
(dB)
2
1
MLE164
0
0
4
8
12
16
20
IC (mA)
0
0
2
4
6
f (GHz)
V_CE = 2 V; T_amb = 25 °C.
Fig.14 Minimum noise figure as a function of
collector current.
I_C = 2 mA; V_CE = 2 V; T_amb = 25 °C.
Fig.15 Minimum noise figure as a function of
frequency.
Noise data: V_CE = 2 V; I_C = 4 mA; T_amb = 25 °C; typical values
f
(GHz)
F_min
Γ_opt
r_n
(dB)
(mag)
(deg)
(Ω)
2
1.0
0.39
55.9
0.20
3
1.2
0.23
86.8
0.15
4
1.4
0.11
142.5
0.13
5
1.6
0.14
−121.0
0.16
6
1.7
0.28
−74.2
0.27
7
1.9
0.41
−52.1
0.43
8
2.1
0.47
−32.6
0.66
9
2.3
0.54
−14.1
0.91
10
2.6
0.62
3.7
1.22
11
2.8
0.63
22.7
1.44
12
3.0
0.61
36.8
1.65
2003 Jun 12
9