BFU540 Datasheet, PDF (6/16 Pages) NXP Semiconductors – NPN SiGe wideband transistor

Philips Semiconductors
NPN SiGe wideband transistor
Product specification
BFU540
200
handbook, halfpage
Cre
(fF)
160
MLE156
120
80
40
0
0
0.5
1
1.5
2
VCB (V)
I_C = 0; f = 1 MHz; T_amb = 25 °C.
Fig.7 Feedback capacitance as a function of
collector-base voltage; typical values.
25
handbook, halfpage
ITO
(dBm)
20
15
10
5
0
1
MLE157
10
10²
IC (mA)
V_CE = 2 V; f = 2 GHz.
Fig.8 Third order intercept point as a function of
collector current.
12
handbook, halfpage
PL _1dB
(dBm)
8
MLE158
4
0
−4
1
10
10²
IC (mA)
V_CE = 2 V; f = 2 GHz; source and load tuned for optimum gain.
Fig.9 Output power at 1 dB gain compression as
a function of collector current.
2003 Jun 12
6