BFU540 Datasheet, PDF (4/16 Pages) NXP Semiconductors – NPN SiGe wideband transistor

Philips Semiconductors
NPN SiGe wideband transistor
Product specification
BFU540
CHARACTERISTICS
T_j = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
h_FE
C_c
C_re
G_max
NF
P_L1
ITO
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-base leakage current
DC current gain
collector capacitance
feedback capacitance
maximum power gain; note 1
noise figure
output power at 1 dB gain
compression
third order intercept point
I_C = 2.5 µA; I_E = 0
I_C = 1 mA; I_B = 0
I_E = 2.5 µA; I_C = 0
I_E = 0; V_CB = 4.5 V
I_C = 40 mA; V_CE = 2 V
I_E = i_e = 0; V_CB = 2 V; f = 1 MHz
I_C = 0; V_CB = 2 V; f = 1 MHz
I_C = 40 mA; V_CE = 2 V; f = 2 GHz;
T_amb = 25 °C
I_C = 2 mA; V_CE = 2 V; f = 2 GHz;
Γ_S = Γ_opt
I_C = 20 mA; V_CE = 2 V; f = 2 GHz;
Z_S = Z_{S opt}; Z_L = Z_{L opt}; note 2
I_C = 40 mA; V_CE = 2 V; f = 2 GHz;
Z_S = Z_{S opt}; Z_L = Z_{L opt}; note 2
Notes
1. G_max is the maximum power gain, if K > 1. If K < 1 then G_max = MSG.
2. Z_S and Z_L are optimized for gain.
MIN.
9
2.3
2.5
−
70
−
−
−
TYP.
−
−
−
−
140
520
105
20
MAX.
−
−
−
15
210
−
−
−
UNIT
V
V
V
nA
fF
fF
dB
−
0.9 −
dB
−
11 −
dBm
−
21 −
dBm
2003 Jun 12
4