74HCT3G04 Datasheet, PDF (9/17 Pages) NXP Semiconductors – Inverter

Philips Semiconductors
Inverter
Product specification
74HC3G04; 74HCT3G04
Type 74HCT3G04
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
T_amb = 25 °C
V_IH
HIGH-level input voltage
V_IL
LOW-level input voltage
V_OH
HIGH-level output voltage
V_OL
LOW-level output voltage
I_LI
input leakage current
I_CC
quiescent supply current
∆I_CC
additional supply current
per input
T_amb = −40 to +85 °C
V_IH
HIGH-level input voltage
V_IL
LOW-level input voltage
V_OH
HIGH-level output voltage
V_OL
LOW-level output voltage
I_LI
I_CC
∆I_CC
input leakage current
quiescent supply current
additional supply current
per input
TEST CONDITIONS
OTHER
V_CC (V)
V_I = V_IH or V_IL
I_O = −20 µA
I_O = −4.0 mA
V_I = V_IH or V_IL
I_O = 20 µA
I_O = 4.0 mA
V_I = V_CC or GND
V_I = V_CC or GND;
I_O = 0
V_I = V_CC − 2.1 V;
I_O = 0
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
5.5
4.5 to 5.5
V_I = V_IH or V_IL
I_O = −20 µA
I_O = −4.0 mA
V_I = V_IH or V_IL
I_O = 20 µA
I_O = 4.0 mA
V_I = V_CC or GND
V_I = V_CC or GND;
I_O = 0
V_I = V_CC − 2.1 V;
I_O = 0
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
5.5
4.5 to 5.5
MIN.
2.0
−
4.4
4.18
−
−
−
−
−
2.0
−
4.4
4.13
−
−
−
−
−
TYP.
1.6
1.2
4.5
4.32
0
0.15
−
−
−
−
−
−
−
−
−
−
−
−
MAX. UNIT
−
V
0.8
V
−
V
−
V
0.1
V
0.26 V
±0.1
µA
1.0
µA
300
µA
−
V
0.8
V
−
V
−
V
0.1
V
0.33 V
±1.0
µA
10
µA
375
µA
2003 Oct 30
9