74HCT3G04 Datasheet, PDF (6/17 Pages) NXP Semiconductors – Inverter

Philips Semiconductors
Inverter
Product specification
74HC3G04; 74HCT3G04
DC CHARACTERISTICS
Type 74HC3G04
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
T_amb = 25 °C
V_IH
HIGH-level input voltage
V_IL
LOW-level input voltage
V_OH
HIGH-level output voltage
V_OL
LOW-level output voltage
I_LI
input leakage current
I_CC
quiescent supply current
TEST CONDITIONS
OTHER
V_CC (V)
MIN.
2.0
4.5
6.0
2.0
4.5
6.0
V_I = V_IH or V_IL
I_O = −20 µA
2.0
I_O = −20 µA
4.5
I_O = −20 µA
6.0
I_O = −4.0 mA
4.5
I_O = −5.2 mA
6.0
V_I = V_IH or V_IL
I_O = 20 µA
2.0
I_O = 20 µA
4.5
I_O = 20 µA
6.0
I_O = 4.0 mA
4.5
I_O = 5.2 mA
6.0
V_I = V_CC or GND 6.0
V_I = V_CC or GND; 6.0
I_O = 0
1.5
3.15
4.2
−
−
−
1.9
4.4
5.9
4.18
5.68
−
−
−
−
−
−
−
TYP.
1.2
2.4
3.2
0.8
2.1
2.8
2.0
4.5
6.0
4.32
5.81
0
0
0
0.15
0.16
−
−
MAX. UNIT
−
V
−
V
−
V
0.5
V
1.35
V
1.8
V
−
V
−
V
−
V
−
V
−
V
0.1
V
0.1
V
0.1
V
0.26
V
0.26
V
±0.1
µA
1.0
µA
2003 Oct 30
6