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74HC04 Datasheet, PDF (9/20 Pages) NXP Semiconductors – Hex inverter
Philips Semiconductors
Hex inverter
Product specification
74HC04; 74HCT04
Type 74HCT04
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
Tamb = 25 °C
VIH
HIGH-level input voltage
VIL
LOW-level input voltage
VOH
HIGH-level output voltage
VOL
LOW-level output voltage
ILI
input leakage current
IOZ
3-state output OFF current
ICC
quiescent supply current
∆ICC
additional supply current per input
Tamb = −40 to +85 °C
VIH
HIGH-level input voltage
VIL
LOW-level input voltage
VOH
HIGH-level output voltage
VOL
LOW-level output voltage
ILI
IOZ
ICC
∆ICC
input leakage current
3-state output OFF current
quiescent supply current
additional supply current per input
TEST CONDITIONS
OTHER
VCC (V)
MIN.
VI = VIH or VIL
IO = −20 µA
IO = −4.0 mA
VI = VIH or VIL
IO = 20 µA
IO = 4.0 mA
VI = VCC or GND
VI = VIH or VIL;
VO = VCC or GND;
IO = 0
VI = VCC or GND;
IO = 0
VI = VCC − 2.1 V;
IO = 0
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
5.5
5.5
4.5 to 5.5
2.0
−
4.4
3.84
−
−
−
−
−
−
VI = VIH or VIL
IO = −20 µA
IO = −4.0 mA
VI = VIH or VIL
IO = 20 µA
IO = 4.0 mA
VI = VCC or GND
VI = VIH or VIL;
VO = VCC or GND;
IO = 0
VI = VCC or GND;
IO = 0
VI = VCC − 2.1 V;
IO = 0
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
5.5
5.5
4.5 to 5.5
2.0
−
4.4
3.84
−
−
−
−
−
−
TYP.
1.6
1.2
4.5
4.32
0
0.15
−
−
−
120
−
−
−
−
−
−
−
−
−
−
−
−
MAX. UNIT
−
V
0.8
V
−
V
−
V
0.1
V
0.26 V
±0.1 µA
±0.5 µA
2
µA
432 µA
−
V
0.8
V
−
V
−
V
0.1
V
0.33 V
±1.0 µA
±5.0 µA
20
µA
540 µA
2003 Jul 23
9