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74HC04 Datasheet, PDF (5/20 Pages) NXP Semiconductors – Hex inverter
Philips Semiconductors
Hex inverter
Product specification
74HC04; 74HCT04
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
VCC
VI
VO
Tamb
supply voltage
input voltage
output voltage
ambient temperature
tr, tf
input rise and fall times
CONDITIONS
74HC04
74HCT04
UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
2.0 5.0 6.0 4.5 5.0 5.5 V
0
−
VCC 0
−
VCC V
0
−
VCC 0
−
VCC V
see DC and AC −40 +25 +125 −40 +25 +125 °C
characteristics per
device
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
−
−
1000 −
−
−
ns
−
6.0 500 −
6.0 500 ns
−
−
400 −
−
−
ns
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
VCC
supply voltage
IIK
input diode current
IOK
output diode current
IO
output source or sink
current
ICC, IGND
Tstg
Ptot
VCC or GND current
storage temperature
power dissipation
DIP14 package
other packages
CONDITIONS
VI < −0.5 V or VI > VCC + 0.5 V
VO < −0.5 V or VO > VCC + 0.5 V
−0.5 V < VO < VCC + 0.5 V
Tamb = −40 to +125 °C; note 1
Tamb = −40 to +125 °C; note 2
MIN.
−0.5
−
−
−
MAX.
+7.0
±20
±20
±25
UNIT
V
mA
mA
mA
−
±50
mA
−65
+150
°C
−
750
mW
−
500
mW
Notes
1. For DIP14 packages: above 70 °C derate linearly with 12 mW/K.
2. For SO14 packages: above 70 °C derate linearly with 8 mW/K.
For SSOP14 and TSSOP14 packages: above 60 °C derate linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60 °C derate linearly with 4.5 mW/K.
2003 Jul 23
5