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TDA8060ATS Datasheet, PDF (8/16 Pages) NXP Semiconductors – Satellite ZERO-IF QPSK down-converter
Philips Semiconductors
Satellite ZERO-IF QPSK down-converter
Product specification
TDA8060ATS
SYMBOL
PARAMETER
CONDITIONS MIN. TYP. MAX. UNIT
B(−3dB)
Zo
Vo(p-p)
Ro(L)
channel −3 dB bandwidth
output impedance
output voltage level (peak-to-peak value)
resistive load at output
note 8
−
80 −
−
50 −
−
1
−
400 −
−
MHz
Ω
V
Ω
Overall with a 100 nF capacitor instead of LP1 and LP2
td(g)(I-Q)(40)
group delay mismatch in 40 MHz band
between I and Q
−
0.5 2
ns
td(g)(I-Q)(R40)
Gv(I-Q)(40)
group delay ripple in 40 MHz band for I or Q
voltage gain mismatch in 40 MHz band
between I and Q
−
0.5 1
ns
−
−
1
dB
GR(I-Q)(40)
voltage gain ripple in 40 MHz band for I or Q
−
−
1
dB
SYMMETRICAL RF INPUT
Gv(RF-IBBOUT)(min) minimum voltage gain from RF input to
pin IBBOUT
VAGC = 0.1VCC
−
26 −
dB
Gv(RF-IBBOUT)(max) maximum voltage gain from RF input to
pin IBBOUT
VAGC = 0.9VCC
−
63 −
dB
Gv(RF-QBBOUT)(min) minimum voltage gain from RF input to
pin QBBOUT
VAGC = 0.1VCC
−
26 −
dB
Gv(RF-QBBOUT)(max) maximum voltage gain from RF input to
pin QBBOUT
VAGC = 0.9VCC
−
63 −
dB
Fi
noise figure at maximum gain
VAGC = 0.9VCC;
−
13 16 dB
Zsource = 50 Ω
ASYMMETRICAL RF INPUT
Gv(RF-IBBOUT)(min) minimum voltage gain from RF input to
pin IBBOUT
VAGC = 0.1VCC
−
26 −
dB
Gv(RF-IBBOUT)(max) maximum voltage gain from RF input to
pin IBBOUT
VAGC = 0.9VCC
−
63 −
dB
Gv(RF-QBBOUT)(min) minimum voltage gain from RF input to
pin QBBOUT
VAGC = 0.1VCC
−
26 −
dB
Gv(RF-QBBOUT)(max) maximum voltage gain from RF input to
pin QBBOUT
VAGC = 0.9VCC
−
63 −
dB
Fi
noise figure at maximum gain
VAGC = 0.9VCC;
−
14 −
dB
Zsource = 50 Ω
Notes
1. This parameter is very dependent on the application; the range represents the capacity of the oscillator.
2. Measured in baseband (at pin IOUT or pin QOUT) on a carrier at 2 MHz and 25 dBmV.
3. fLO = 1000 MHz; RF wanted = 1005 MHz; RF unwanted = 2002 MHz (see Fig.3). Done on the demo board
OM5732.
4. Quadrature error with respect to 90°.
5. The differential input impedance of the IC is 34 Ω in series with the IC pins which give an inductance of 5 nH.
For optimum performance, this inductance should be cancelled by a matching network. Coupling capacitors of 1 pF
give an acceptable result.
6. Gain = Vo(dB) − Vi(dB) (see Fig.4). Gain for symmetrical RF input.
2000 Nov 10
8