TDA8060ATS Datasheet, PDF (5/16 Pages) NXP Semiconductors – Satellite ZERO-IF QPSK down-converter

Philips Semiconductors
Satellite ZERO-IF QPSK down-converter
Product specification
TDA8060ATS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V_CC
V_i(max)
t_sc(max)
T_amb
T_stg
T_j
PARAMETER
supply voltage
maximum input voltage on all pins
maximum short-circuit time
ambient temperature
storage temperature
junction temperature
MIN.
−0.3
−0.3
−
−20
−55
−
MAX.
+6.0
V_CC
10
+85
+150
150
UNIT
V
V
s
°C
°C
°C
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_th(j-a)
thermal resistance from junction to ambient
CONDITIONS
in free air
VALUE
120
UNIT
K/W
DC CHARACTERISTICS
V_CC = 4.75 to 5.25 V; T_amb = −20 to +85 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V_CC
supply voltage
I_CC
supply current
PEN = 5 V
PEN = 0 V
Conversion stage
V_I(RFA)
DC input voltage on pin RFA
V_I(RFB)
DC input voltage on pin RFB
V_O(IOUT)
DC output voltage on pin IOUT
V_O(QOUT) DC output voltage on pin QOUT
Quadrature generator
V_O(LOOUT) DC output voltage on pin LOOUT
V_O(LOOUTC) DC output voltage on pin LOOUTC
Baseband stage
V_I(IBBIN)
V_I(QBBIN)
V_O(IBBOUT)
V_O(QBBOUT)
DC input voltage on pin IBBIN
DC input voltage on pin QBBIN
DC output voltage on pin IBBOUT
DC output voltage on pin QBBOUT
MIN.
4.75
73
70
−
−
−
−
−
−
−
−
−
−
TYP.
5.00
83
80
0.9
0.9
1.85
1.85
4.0
4.0
2.5
2.5
2.5
2.5
MAX.
5.25
93
90
UNIT
V
mA
mA
−
V
−
V
−
V
−
V
−
V
−
V
−
V
−
V
−
V
−
V
2000 Nov 10
5