TDA8050A Datasheet, PDF (8/28 Pages) NXP Semiconductors – QPSK transmitter

Philips Semiconductors
QPSK transmitter
Product specification
TDA8050A
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP.
Programmable gain and output buffer; note 1
Z_i(dif)
∆G
differential input impedance
output level step size
−
5.6
−
−
∆buf_O
output level adjust range
V_i = 30 dBmV sine wave
65 MHz at pins
RF_IN and RF_INC;
DAC = 0 to 31
32 39
V_o
operational output level
−
55
∆V_o
output flatness
f = 5 to 65 MHz; V_i = 30 dBmV −
3
sine wave; DAC = 28
V_IL(ENL)
V_IH(ENH)
ISO
output controlled enable low
output controlled enable high
disable isolation
output buffer on
output buffer off
V_i = 100 mV_dif; DAC = 28;
f = 65 MHz; OE = 0,5 V
−
−
2.4 −
−35 −90
G_V(max)
V_o(1dB)
H₂
H₃
maximum gain
1 dB compression point
2nd order harmonic of
5 to 65 MHz signal
3rd order harmonic
of 5 to 65 MHz signal
see Fig.5
see Fig.5
f = 10 to 65 MHz; see Fig.6
f = 65 to 120 MHz; see Fig.6
f = 15 to 65 MHz; see Fig.6
f = 65 to 120 MHz; see Fig.6
17 18.5
58 −
−
−
−
−
−
−
−
−
Overall; note 1
Φ_osc
phase noise
at 10 kHz; note 2
at 100 kHz; note 2
−
−75
−
−95
H₂
2nd order harmonic of
f = 10 to 130 MHz;
−
−
5 to 65 MHz signal
V_in = 100 mV_dif at I and Q
inputs; V_out = 55 dBmV
H₃
3rd order harmonic
of 5 to 65 MHz signal
f = 15 to 195 MHz;
V_in = 100 mV_dif at I and Q
inputs; V_out = 55 dBmV
−
−
S_o
spurious signals of 5 to 65 MHz f = 5 to 65 MHz; V_in = 100 mV_dif −
−
signal
at I and Q inputs;
V_out = 55 dBmV
IP₃
3rd order interception point at
I input
−
−
ISO_tot
C/N
total isolation at I/Q midrange
carrier to noise ratio at final
output at 2 MHz from carrier
see Fig.7
V_in = 100 mV_dif;
V_out = 35 to 55 dBmV;
f = 65 MHz
−
−90
−
113
MAX. UNIT
−
kΩ
2
dB
−
dB
−
dBmV
5
dB
0.8 V
−
V
−
dBc
−
dB
−
dBmV
−45 dBc
−35 dBc
−45 dBc
−35 dBc
−
dBc/Hz
−
dBc/Hz
−40 dBc
−40 dBc
−45 dBc
49 dBmV
−65 dBc
−
dBc/Hz
1999 Nov 05
8