SI4410DY Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
Si4410DY
N-channel enhancement mode field-effect transistor
50
I_S
V_GS = 0 V
(A)
40
30
03ad53
10
V_GS
(V)
8
I_D = 10 A
V_DD = 15 V
T_j = 25 ºC
6
03ad55
20
4
10
0
0
150 ºC
T_j = 25 ºC
0.4
0.8
1.2
1.6
V_SD (V)
2
0
0
10
20
30 _{QG (nC)} 40
T_j = 25 °C and 150 °C; V_GS = 0 V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I_D = 10 A; V_DD = 15 V
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
9397 750 08048
Product data
Rev. 02 — 05 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
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