SI4410DY Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
Si4410DY
N-channel enhancement mode field-effect transistor
2.5
V_GS(th)
(V)
2
1.5
1
max
typ
min
03aa33
10-1
I_D
(A)
10-2
10-3
10-4
03aa36
min typ max
0.5
10-5
0
-60
0
60
120
180
T_j (^oC)
I_D = 250 µA; V_DS = V_GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
10-6
0
0.5
1
1.5
2
2.5
3
V_GS (V)
T_j = 25 °C; V_DS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
40
g_{fs VDS > ID x RDSon}
(S)
30
20
03ae24
T_j = 25 ºC
150 ºC
10
0
0
10
20
30
40
50
I_D (A)
T_j = 25 °C and 150 °C; V_DS > I_D × R_DSon
Fig 11. Forward transconductance as a function of
drain current; typical values.
104
C
(pF)
03ad54
103
C_iss
C_oss
C_rss
10
10-1
1
10
102
V_DS (V)
V_GS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 08048
Product data
Rev. 02 — 05 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
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