SI4410DY Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
Si4410DY
N-channel enhancement mode field-effect transistor
120
P_der
(%)
100
03aa11
80
60
40
20
0
0 25 50 75 100 125 150 175
T_amb (^oC)
P_der = _P-------^P----^t--^o--^t------- × 100%
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
120
I_der
(%)
100
03aa19
80
60
40
20
0
0 25 50 75 100 125 150 175
T_amb (^oC)
I_der = -_I------^I---^D-------- × 100%
D ( 25 ^°C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
102
I_D
R_DSon = V_DS / I_D
(A)
10
03ae23
tp = 10 µs
1 ms
1
P
10-1
δ
=
tp
T
tp
t
T
10-2
10-1
1
D.C.
10
10 ms
100 ms
10 s
102
V_DS (V)
T_amb = 25 °C; I_DM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08048
Product data
Rev. 02 — 05 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
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