PSMN4R2-30MLD_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology

NXP Semiconductors
PSMN4R2-30MLD
N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using
NextPowerS3 Technology
80
I_D
(A)
60
aaa-009551
30
R_DSon
(mΩ)
24
2.8 V
3V
aaa-009552
18
3.5 V
40
12
20
150°C
T_j = 25°C
0
0 0.5 1 1.5 2 2.5 3 3.5 4
V_GS (V)
6
4.5 V
V_GS = 10 V
0
0
18
36
54
72
90
I_D (A)
Fig. 9. Transfer characteristics; drain current as a
Fig. 10. Drain-source on-state resistance as a function
function of gate-source voltage; typical values
of drain current; typical values
2
a
1.6
003aal037
10 V
1.2
0.8
V_GS = 4.5 V
0.4
0
-60 -30 0 30 60 90 120 150 180
T_j (°C)
Fig. 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1
Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig. 12. Gate charge waveform definitions
PSMN4R2-30MLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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