PSMN4R2-30MLD_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology

NXP Semiconductors
PSMN4R2-30MLD
N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using
NextPowerS3 Technology
Symbol
Parameter
Conditions
Q_oss
output charge
V_GS = 0 V; V_DS = 15 V; f = 1 MHz;
T_j = 25 °C
Source-drain diode
V_SD
source-drain voltage I_S = 15 A; V_GS = 0 V; T_j = 25 °C; Fig. 15
t_rr
reverse recovery time I_S = 25 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 15 V; Fig. 16
[1]
t_a
reverse recovery rise
time
t_b
reverse recovery fall
time
S
softness factor
[1] includes capacitive recovery
120
I_D
(A)
10 V
4.5 V
90
aaa-009549
3.5 V
20
R_DSon
(mΩ)
16
Min Typ Max Unit
-
16.8 -
nC
-
0.81 1.2 V
-
26
52
ns
-
15
30
nC
-
12.7 -
ns
-
13.3 -
ns
-
1.05 -
aaa-009550
12
60
V_GS = 3 V
8
30
2.8 V
2.6 V
2.4 V
0
0
0.5
1
1.5
2
2.5
3
V_DS (V)
4
0
0 2 4 6 8 10 12 14 16
V_GS (V)
Fig. 7. Output characteristics; drain current as a
Fig. 8. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
PSMN4R2-30MLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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